Related Experiment Video
Updated: May 24, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Ge growth on vicinal si(001) surfaces: island's shape and pair interaction versus miscut angle
L Persichetti1, A Sgarlata, M Fanfoni
1Dipartimento di Fisica, Università degli studi di Roma Tor Vergata, via della Ricerca Scientifica 1, 00133 Roma, Italy.
Abstract:
A complete description of Ge growth on vicinal Si(001) surfaces is provided. The distinctive mechanisms of the epitaxial growth process on vicinal surfaces are clarified from the very early stages of Ge deposition to the nucleation of 3D islands. By interpolating high-resolution scanning tunneling microscopy measurements with continuum elasticity modeling, we assess the dependence of island's shape and elastic interaction on the substrate misorientation. Our results confirm that vicinal surfaces offer an additional degree of control over the shape and symmetry of self-assembled nanostructures.
Related Concept Videos
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
VSEPR Theory and the Effect of Lone Pairs
Hybridization of Atomic Orbitals I

