A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor

In this paper we have used quantum mechanical transport approach to analyse electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyse employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical transport model uses the non equilibrium Green's function (NEGF) while the semi classic model doesn't account for tunneling current. The results have shown that Quantum tunneling is significant in inversion condition especially when the channel length is short. For the long devices quantum modeling and semi classical model produce the same result, and tunneling is negligible.