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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Conduction and valence band discontinuities in some new semiconductor heterojunctions
Qinsheng Zhu1, Ju Wu, Chengming Li
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Bejing 100083, People's Republic of China.
Abstract:
Conduction and valence band discontinuities (band offsets) in the heterojunctions consisting of ZnO/4H-SiC, ZnO/GaAs, MgO/4H-SiC, MgO/AIN, InN/ZnO, InN/GaAs, MgO/InN, and InN/4H-SiC, were precisely determined by X-ray photoelectron spectroscopy (XPS) measurement. As an example, the XPS measurement on the ZnO/4H-SiC heterojunction is described in detail in the beginning of the section of the experiments. We also analyzed several factors which may have impact on the band offset in a practical heterojunction. The deviation in band offset induced by both polar and non-polar heterojunction band bending from the true value was also characterized by taking into account the intrinsic polarization field in the heterojunction consisting of the two polar materials.
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