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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Low-dielectric constant insulators for future integrated circuits and packages

Paul A Kohl1

  • 1Georgia Institute of Technology, School of Chemical and Biomolecular Engineering, Atlanta, GA 30332-0100, USA. kohl@gatech.edu

Annual Review of Chemical and Biomolecular Engineering
|March 22, 2012
PubMed

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