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Updated: May 23, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
High mobility flexible graphene field-effect transistors with self-healing gate dielectrics
Chun-Chieh Lu1, Yung-Chang Lin, Chao-Hui Yeh
1Department of Electrical Engineering, Materials Science and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan.
Abstract:
A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.
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