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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: May 22, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable

Mengjiao Li1, Feng-Shou Yang2,3, Yanan Liu1

  • 1School of Microelectronics, Shanghai University, Jiading, Shanghai, China.

Advanced Materials (Deerfield Beach, Fla.)
|May 21, 2026
PubMed
Summary

This study introduces a novel ferroelectric-van der Waals transistor (FeFET) using Bi2O2Se for advanced AI hardware. The new FeFET offers high reliability and accuracy for neuromorphic computing applications.

Keywords:
artificial neural networkelectronic engineeringferroelectricityneuromorphic engineeringtransistorvon neumann architecture

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

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Last Updated: May 22, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Area of Science:

  • Materials Science
  • Nanotechnology
  • Computer Engineering

Background:

  • Ferroelectric memories are crucial for AI hardware but face challenges at the nanoscale.
  • Interfacial degradation and phase instability limit reliability and accuracy in current ferroelectric devices.

Purpose of the Study:

  • To demonstrate a high-performance ferroelectric-van der Waals transistor (FeFET) for computing-in-memory.
  • To address challenges in nanoscale ferroelectric device reliability and precision.

Main Methods:

  • Integration of a single-crystalline Bi2O2Se (BOS) layer into a ferroelectric/MoS2 heterostructure.
  • Utilizing an asymmetrical capacitive stack for polarization-charge compensation.
  • Fabrication via a low-temperature process.

Main Results:

  • The BOS-based FeFET shows 10-year retention at 85°C and endurance over 10^11 cycles.
  • Achieved stable 32-state analog switching with minimal retention variation and ultra-low programming error.
  • Demonstrated high spatial uniformity (7% variation) and 98.5% accuracy in nonlinear classification tasks.

Conclusions:

  • The developed FeFET offers exceptional reliability and precise multi-level programming for neuromorphic computing.
  • A co-design methodology integrating materials, device engineering, and algorithms is established for next-generation computing.
  • Device imperfections can be leveraged for enhanced learning dynamics in AI applications.