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Updated: May 23, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
Stefan Tappertzhofen1, Hans Mündelein, Ilia Valov
1Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52064 Aachen, Germany. tappertzhofen@iwe.rwth-aachen.de
Abstract:
The mobility of copper ions and redox reactions of Cu at the interface with SiO(2) being directly attributed to the resistive switching effect have been studied by cyclic voltammetry (CV). The electrode kinetics of the Cu(z+)/Cu redox reactions were analyzed suggesting the formation of both Cu(+) and Cu(2+) species. The ion mobility shows an unexpected strong dependence on the ion concentration indicating ion-ion interactions typical for concentrated solution conditions. Based on the standard reduction potentials for Cu(z+)/Cu we identified partial electrochemical redox reactions during oxidation and reduction. The results contribute to a detailed understanding of the resistive switching effect in Cu/SiO(2)/Pt cells and provide insight into electrochemically assisted diffusion of metal cations in oxides in general.
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