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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Superradiance dynamics in semiconductor laser diode structures.

D L Boiko¹, P P Vasil'ev

¹Centre Suisse d’Electronique et de Microtechnique SA, 2002, Neuchâtel, Switzerland. dmitri.boiko@csem.ch

|April 27, 2012

Summary

Superradiant emission (SR) in InGaN/GaN quantum wells can generate ultrashort, high-power blue/violet laser pulses. This phenomenon, explained by macroscopic coherence, is applicable to various semiconductor materials.

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Area of Science:

Semiconductor physics
Quantum optics
Laser technology

Background:

Superradiant emission (SR) is a quantum optical phenomenon involving coherent light emission.
Semiconductor heterostructures, like InGaN/GaN quantum wells (QWs), are promising for advanced laser applications.

Purpose of the Study:

To theoretically analyze superradiant emission in semiconductor heterostructure lasers.
To model the generation of short, high-power superradiant pulses in InGaN/GaN QWs.

Main Methods:

Theoretical analysis of superradiant emission (SR).
Numerical simulations using semiclassical traveling wave Maxwell-Bloch equations.
Modeling InGaN/GaN heterostructure quantum wells (QWs).

Main Results:

Prediction of superradiant pulses as short as 500 fs with peak powers over 200 W for InGaN/GaN QWs.
Demonstration of macroscopic coherence buildup in electron-hole ensembles during SR pulse formation.
Validation of SR phenomenon within the Ginzburg-Landau equation framework for phase transitions.

Conclusions:

Superradiant emission in InGaN/GaN QWs offers a pathway to high-power, ultrashort blue/violet laser pulses.
The theoretical framework supports the transition to a macroscopically coherent state in semiconductors.
The developed theory is broadly applicable to other semiconductor materials for SR applications.