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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Young Tack Lee1, Pyo Jin Jeon, Kwang H Lee

  • 1Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|May 3, 2012
PubMed
Abstract

No abstract available in PubMed .

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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