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Updated: May 22, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst
Chad M Eichfeld1, Stephan S A Gerstl, Ty Prosa
1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
Abstract:
Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vapor–liquid–solid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2 × 10(20) cm(-3), which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

