Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite...

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Nonvolatile floating gate memory (NFGM) devices are crucial for data storage.
• Improving charge storage density and retention is a key challenge in NFGM technology.
• AgInSbTe (AIST) and HfO(2)/SiO(2) are promising materials for memory device applications.

Purpose of the Study:

• To develop a novel NFGM device with enhanced memory characteristics.
• To investigate the performance of an AgInSbTe-SiO(2) nanocomposite as a charge trap layer.
• To evaluate the impact of a HfO(2)/SiO(2) blocking oxide layer on device performance.

Main Methods:

• Fabrication of NFGM devices using an AgInSbTe-SiO(2) nanocomposite charge trap layer and a HfO(2)/SiO(2) blocking oxide layer.
• Characterization of memory window shift, charge storage density, and retention properties.
• Analysis of material properties using analytical techniques.

Main Results:

• Achieved an extremely large memory window shift of approximately 30.7 V.
• Obtained a high charge storage density of 2.3 × 10^13 cm^-2 at ± 23 V.
• Demonstrated good retention property with only 16.1% charge loss after 10^4 s stress at 85°C.
• Incorporation of SiO(2) layer provided Coulomb blockade effect and inhibited Hf diffusion.

Conclusions:

• The AgInSbTe-SiO(2) nanocomposite is a feasible material for NFGM fabrication.
• Simplified processing and low-temperature annealing (400°C) are advantageous.
• The developed device shows significant potential for high-performance nonvolatile memory applications.