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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: May 22, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Solution processed high performance pentacene thin-film transistors.

Ting-Han Chao1, Ming-Jen Chang, Motonori Watanabe

  • 1Department of Chemistry, National Taiwan Normal University, Ting-Chow Road, Taipei, 11677, Taiwan.

Chemical Communications (Cambridge, England)
|May 17, 2012
PubMed
Summary
This summary is machine-generated.

Researchers developed high-performance organic thin-film transistors using a novel pentacene precursor. This method yields high-quality films, enabling field-effect transistor (FET) devices with excellent mobility and on/off ratios.

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Last Updated: May 22, 2026

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Organic thin-film transistors (OTFTs) are crucial for flexible electronics.
  • Pentacene is a widely studied organic semiconductor for OTFTs.
  • Developing efficient fabrication methods for high-quality pentacene films is essential.

Purpose of the Study:

  • To fabricate high-performance thin-film transistors (TFTs).
  • To utilize a new pentacene precursor and a multiple spin-heat procedure.
  • To achieve high-quality pentacene thin films for device applications.

Main Methods:

  • Fabrication of thin-film transistors using a novel pentacene precursor.
  • Employing a multiple spin-heat treatment procedure for film deposition.
  • Device fabrication in a top-contact configuration.

Main Results:

  • Successful preparation of high-quality pentacene thin films.
  • Fabrication of functional field-effect transistor (FET) devices.
  • Achieved a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1).
  • Obtained a high on/off ratio of 10(6).

Conclusions:

  • The new pentacene precursor and spin-heat method enable high-quality film formation.
  • The fabricated FET devices demonstrate excellent performance characteristics.
  • This approach is promising for advancing organic electronics and TFT technology.