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Updated: May 22, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Vertically aligned BCN nanotubes with high capacitance
Eswaramoorthi Iyyamperumal1, Shuangyin Wang, Liming Dai
1Center of Advanced Science and Engineering for Carbon (Case4Carbon), Department of Macromolecular Science and Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA.
Abstract:
Using a chemical vapor deposition method, we have synthesized vertically aligned BCN nanotubes (VA-BCNs) on a Ni-Fe-coated SiO(2)/Si substrate from a melamine diborate precursor. The effects of pyrolysis conditions on the morphology and thermal property of grown nanotubes, as well as the nanostructure and composition of an individual BCN nanotube, were systematically studied. It was found that nitrogen atoms are bonded to carbons in both graphitic and pyridinic forms and that the resultant VA-BCNs grown at 1000 °C show the highest specific capacitance (321.0 F/g) with an excellent rate capability and high durability with respect to nonaligned BCN (167.3 F/g) and undoped multiwalled carbon nanotubes (117.3 F/g) due to synergetic effects arising from the combined co-doping of B and N in CNTs and the well-aligned nanotube structure.
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