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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

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From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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Published on: December 7, 2015

Vertically aligned BCN nanotubes with high capacitance.

Eswaramoorthi Iyyamperumal1, Shuangyin Wang, Liming Dai

  • 1Center of Advanced Science and Engineering for Carbon (Case4Carbon), Department of Macromolecular Science and Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA.

ACS Nano
|May 30, 2012
PubMed
Summary
This summary is machine-generated.

Vertically aligned boron carbon nitride nanotubes (VA-BCNs) were synthesized and showed superior specific capacitance and durability. This advancement is attributed to boron and nitrogen co-doping within the aligned nanotube structure.

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrochemistry

Background:

  • Carbon nanotubes (CNTs) are widely researched for energy storage applications.
  • Doping CNTs with other elements can enhance their electrochemical properties.
  • Boron and nitrogen co-doping offers potential synergistic effects.

Purpose of the Study:

  • To synthesize vertically aligned boron carbon nitride nanotubes (VA-BCNs).
  • To investigate the impact of pyrolysis conditions on VA-BCN properties.
  • To evaluate the electrochemical performance of VA-BCNs for energy storage.

Main Methods:

  • Chemical vapor deposition (CVD) synthesis of VA-BCNs on a Ni-Fe coated SiO(2)/Si substrate.
  • Utilizing a melamine diborate precursor.
  • Systematic study of pyrolysis conditions and characterization of nanotube morphology, nanostructure, composition, and thermal properties.

Main Results:

  • Vertically aligned BCN nanotubes (VA-BCNs) were successfully synthesized.
  • Optimal growth at 1000 °C yielded VA-BCNs with graphitic and pyridinic nitrogen bonding.
  • VA-BCNs exhibited a highest specific capacitance of 321.0 F/g, outperforming nonaligned BCN (167.3 F/g) and undoped CNTs (117.3 F/g).
  • High rate capability and durability were observed in the VA-BCNs.

Conclusions:

  • The synergistic effects of boron and nitrogen co-doping combined with the aligned structure significantly enhance electrochemical performance.
  • VA-BCNs represent a promising material for advanced energy storage devices.
  • Controlled synthesis via CVD is crucial for optimizing nanotube properties.