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Published on: August 2, 2019
Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive
Yifei Zhang1, Fengfeng Ye, Jianhui Lin
1State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China. xjyang@fudan.edu.cn.
Abstract:
The conductive properties of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy on single-layer (SL) and bi-layer (BL) GeSi QDs with different dot densities at room temperature. By comparing their average currents, it is found that the BL and high-density QDs are more conductive than the SL and low-density QDs with similar sizes, respectively, indicating the existence of both vertical and lateral couplings between GeSi QDs at room temperature. On the other hand, the average current of the BL QDs increases much faster with the bias voltage than that of the SL QDs does. Our results suggest that the QDs' conductive properties can be greatly regulated by the coupling effects and bias voltages, which are valuable for potential applications.
