Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Atomic Nuclei: Nuclear Relaxation Processes01:23

Atomic Nuclei: Nuclear Relaxation Processes

In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis,  the precessing magnetic moments are randomly oriented around the z-axis. This...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Fermi Level01:18

Fermi Level

The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Electron Configurations02:46

Electron Configurations

Electron configurations and orbital diagrams can be determined by applying the Aufbau principle (each added electron occupies the subshell of lowest energy available), Pauli exclusion principle (no two electrons can have the same set of four quantum numbers), and Hund’s rule of maximum multiplicity (whenever possible, electrons retain unpaired spins in degenerate orbitals).
The relative energies of the subshells determine the order in which atomic orbitals are filled (1s, 2s, 2p, 3s, 3p, 4s,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates.

ACS applied materials & interfaces·2020
Same author

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC.

ACS applied materials & interfaces·2018
Same author

A versatile implementation of pulsed optical excitation in scanning tunneling microscopy.

The Review of scientific instruments·2017
Same author

Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

Nano letters·2016
Same author

Local density of states at metal-semiconductor interfaces: an atomic scale study.

Physical review letters·2015
Same author

Bistable charge configuration of donor systems near the GaAs(110) surfaces.

Nano letters·2011

Related Experiment Video

Updated: May 21, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

Mapping itinerant electrons around Kondo impurities.

H Prüser1, M Wenderoth, A Weismann

  • 1IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany.

Physical Review Letters
|June 12, 2012
PubMed
Summary

Single iron and cobalt atoms beneath a copper surface exhibit a Kondo resonance. Its shape oscillates with impurity depth and distance, revealing anisotropic electron behavior.

More Related Videos

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
12:18

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys

Published on: June 27, 2022

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Related Experiment Videos

Last Updated: May 21, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
12:18

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys

Published on: June 27, 2022

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Area of Science:

  • Condensed Matter Physics
  • Surface Science
  • Quantum Mechanics

Background:

  • The Kondo effect describes the interaction between magnetic impurities and conduction electrons in metals.
  • Understanding impurity physics is crucial for developing novel electronic materials and devices.
  • Scanning tunneling spectroscopy (STS) is a powerful technique for probing electronic properties at the atomic scale.

Purpose of the Study:

  • To investigate the electronic properties of single Fe and Co atoms buried in a Cu(100) surface.
  • To analyze the Kondo resonance and its dependence on impurity position.
  • To probe the anisotropic nature of the itinerant electron spectral function.

Main Methods:

  • Low temperature scanning tunneling spectroscopy (LT-STS) was employed.
  • The local density of states (LDOS) of surface itinerant electrons was mapped.
  • The Kondo resonance signature was analyzed as a function of impurity depth and lateral distance.

Main Results:

  • A clear Kondo resonance was observed for buried Fe and Co atoms.
  • The line shape of the Kondo signature exhibited oscillatory behavior with varying impurity depth and lateral distance.
  • The oscillation period revealed anisotropy in the spectral function of the itinerant electrons.

Conclusions:

  • The study successfully separated the physics of the Kondo system from the measurement process.
  • The observed oscillatory behavior provides insights into electron scattering around buried magnetic impurities.
  • The findings demonstrate the anisotropic nature of the itinerant electron spectral function in the Cu(100) surface.