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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Mapping itinerant electrons around Kondo impurities

H Prüser1, M Wenderoth, A Weismann

  • 1IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen, Germany.

Physical Review Letters
|June 12, 2012
PubMed

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