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Updated: May 21, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Junction investigation of graphene/silicon Schottky diodes
Muatez Mohammed1, Zhongrui Li, Jingbiao Cui
1Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR, 870-71656, USA. zxli3@ualr.edu.
Abstract:
Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed between graphene flakes and silicon n-type substrates exhibit good photovoltaic conversion efficiency while graphene/p-Si devices have poor light harvesting capability.
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