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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Spin transport in high-quality suspended graphene devices
Marcos H D Guimarães1, A Veligura, P J Zomer
1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands. m.h.diniz.guimaraes@rug.nl
Nano Letters
|June 20, 2012
Abstract:
We measure spin transport in high mobility suspended graphene (μ ≈ 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (τ(s) ≈ 150 ps) and spin relaxation length (λ(s) = 4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

