Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Potentiometry: Membrane Electrodes01:15

Potentiometry: Membrane Electrodes

Membrane electrodes, also known as p-ion electrodes, use membranes that selectively interact with free analyte ions, generating a potential difference across the membrane. The resulting membrane potential, known as the asymmetry potential, is not zero even when analyte concentrations on both sides of the membrane are equal. The membrane's response is typically not selective to a single analyte but proportional to the concentration of all ions in the sample solution capable of interacting at the...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

An artefact-resilient wide bandwidth bidirectional graphene neural interface.

Nature communications·2026
Same author

Mitigating Interfacial Contamination for Scalable Integration of Graphene in Neuroelectronic Devices.

Accounts of materials research·2026
Same author

Long-Term Stable Neural Interfaces with Nanoporous Graphene Electrodes and Hybrid Polyimide-Aluminium Oxide Encapsulation.

Small methods·2025
Same author

Flexible graphene-based neurotechnology for high-precision deep brain mapping and neuromodulation in Parkinsonian rats.

Nature communications·2025
Same author

Interfacing with the Brain: How Nanotechnology Can Contribute.

ACS nano·2025
Same author

Amorphous nitride semiconductors with highly tunable optical and electronic properties: the benefits of disorder in Ca-Zn-N thin films.

Materials horizons·2024
Same journal

Amorphous High-Entropy Oxides With High-Valent Metal and Oxygen-Vacancy Pairs for Thermally Stable Catalytic Oxidation.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

H<sub>2</sub>S Self-Supplied Micelles Reverse Tumor-Immune Effector Cells Energy Metabolisms to Boost Breast Cancer Immunotherapy With Microenvironment Normalization.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Feed-Draw Printing Enables Monolithically Integrated Flexible Sensors With High Interfacial Toughness and Wide Linear Range.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Space-Time Coding Conformal Metasurfaces for Multifrequency Beam Steering and Shaping.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

3D Printing of Magnetic Soft Materials for Functional Structures and Devices.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Photothermal-Activable Artificial Macrophage With Amplified Systemic Antibacterial Responses to Combat Primary and Secondary Infection.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: May 20, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Biofunctional electrolyte-gated organic field-effect transistors.

Felix Buth1, Andreas Donner, Matthias Sachsenhauser

  • 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|July 5, 2012
PubMed
Summary
This summary is machine-generated.

Surface modification of organic field-effect transistors controls pH sensitivity. This advancement highlights their potential for developing advanced biosensor applications.

More Related Videos

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Related Experiment Videos

Last Updated: May 20, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors
10:44

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Area of Science:

  • Materials Science
  • Chemistry
  • Electronics

Background:

  • Solution-gated organic field-effect transistors (SGFETs) are emerging as versatile platforms for electronic sensing.
  • Controlling the surface properties of SGFETs is crucial for tailoring their performance and expanding their applications.

Purpose of the Study:

  • To investigate the impact of surface modification on the pH sensitivity of SGFETs.
  • To explore the potential of SGFETs for biosensing applications through surface functionalization.

Main Methods:

  • Surface modification of SGFETs using various chemical groups.
  • Characterization of pH sensitivity by correlating it with the pKa values of surface moieties.
  • Demonstration of enzyme immobilization on the SGFET surface.

Main Results:

  • Different surface groups effectively modulated the pH sensitivity of the SGFETs.
  • A direct relationship was observed between the pKa of the surface moiety and the transistor's pH response.
  • Successful enzyme modification of the transistor surface was achieved.

Conclusions:

  • Surface modification is a key strategy for tuning the performance of SGFETs.
  • SGFETs exhibit significant potential for use as sensitive and adaptable biosensors.
  • The pKa value serves as a predictable parameter for controlling pH sensitivity in SGFETs.