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One-volt operation of high-current vertical channel polymer semiconductor field-effect transistors
Danvers E Johnston1, Kevin G Yager, Chang-Yong Nam
1Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
Abstract:
We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 40 mA/cm(2), using a one-volt supply voltage, and maintaining near-ideal device operating characteristics. Vertical channel transistors have a similar electronic mobility to that of planar devices using the same polymer semiconductor, consistent with a molecular reorientation within confining trenches we understand through X-ray scattering measurements.
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