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Updated: May 19, 2026
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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
Formation mechanism and characterization of black silicon surface by a single-step wet-chemical process
Li-Gong Li1, Shu-Man Liu, Xiao-Ling Ye
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Journal of Nanoscience and Nanotechnology
|August 3, 2012
Abstract:
We report a simple single-step etching method for formation of black surface on silicon wafer by using HAuCl4-HF-H2O2 etching solution, in which catalytic Au particles were deposited in situ. The black surface suppresses the reflectivity in a wide spectral region. The formation mechanism involved has been discussed.
