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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Satoru Masubuchi1, Kazuyuki Iguchi, Takehiro Yamaguchi
1Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. msatoru@iis.u-tokyo.ac.jp
We studied magnetotransport in graphene wires, finding unique peak structures in magnetoresistance. This behavior, linked to diffusive boundary scattering, differs from classical systems.
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