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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: May 19, 2026

The Frequency Domain Thermoreflectance Technique for Thermal Property Measurements

The Frequency Domain Thermoreflectance Technique for Thermal Property Measurements

Published on: December 5, 2025

Quantitative thermopower profiling across a silicon p-n junction with nanometer resolution.

Byeonghee Lee¹, Kyeongtae Kim, Seungkoo Lee

¹School of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Korea.

|August 15, 2012

Summary

Scanning Seebeck microscopy (SSM) offers nanometer-resolution thermopower profiling. This quantitative method enables precise characterization of nano-thermoelectric materials and nanoelectronic devices.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Published on: January 19, 2018

Area of Science:

Materials Science
Nanotechnology
Physics

Background:

Nanometer-resolution thermopower (S) profiling is crucial for improving thermoelectric figure of merit (ZT) via nanostructuring.
Accurate carrier density profiling in nanoelectronic devices also relies on high-resolution S measurements.
Existing methods lack quantitative accuracy and practical resolution for nanoscale applications.

Purpose of the Study:

To develop a quantitative thermopower (S) profiling method with nanometer resolution.
To enable practical application of this technique to materials like silicon.

Main Methods:

Development of scanning Seebeck microscopy (SSM).
Batch-fabrication of diamond thermocouple probes capable of withstanding >10 GPa contact stress for silicon.
Application of SSM to measure S profiles across silicon p-n junctions.

Main Results:

SSM achieves nanometer-scale quantitative thermopower profiling.
The method successfully characterized silicon, requiring high contact stress (>10 GPa).
Measured S profile peak separation was 4 nm, closely matching the theoretical 2 nm.

Conclusions:

SSM provides high spatial resolution and quantitative measurements for thermopower profiling.
The technique is easy to use and applicable to demanding materials like silicon.
SSM is a vital tool for characterizing nano-thermoelectric materials, nanoelectronic devices, and nanoscale thermal/electrical phenomena.