Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing the Shape of the Weyl Fermi Surface of NbP Using Transverse Electron Focusing.

Physical review letters·2024
Same author

An independent external validation of melanoma risk prediction models using the Australian Melanoma Family Study.

The British journal of dermatology·2020
Same author

Development and external validation study of a melanoma risk prediction model incorporating clinically assessed naevi and solar lentigines.

The British journal of dermatology·2019
Same author

Associations of pigmentary and naevus phenotype with melanoma risk in two populations with comparable ancestry but contrasting levels of ambient sun exposure.

Journal of the European Academy of Dermatology and Venereology : JEADV·2019
Same author

III-V heterostructure tunnel field-effect transistor.

Journal of physics. Condensed matter : an Institute of Physics journal·2018
Same author

Structure and chemistry of interfaces between ceria and yttria-stabilized zirconia studied by analytical STEM.

Ultramicroscopy·2018
Same journal

Unsupervised deep image prior for sparse-view and limited-angle electron tomography.

Ultramicroscopy·2026
Same journal

Determination of the structure of the tertiary phase in the alloy Al<sub>10</sub>Mo<sub>10</sub>Nb<sub>10</sub>Ta<sub>10</sub>Ti<sub>30</sub>Zr<sub>30</sub> using convergent beam electron diffraction.

Ultramicroscopy·2026
Same journal

Predictive drift compensation of multi-frame STEM via live scan modification.

Ultramicroscopy·2026
Same journal

Deep PACBED: Multitask analysis of PACBED images using deep neural networks.

Ultramicroscopy·2026
Same journal

Guided progressive reconstructive imaging: A new quantization-based framework for low-dose, high-throughput and real-time analytical ptychography.

Ultramicroscopy·2026
Same journal

Brightness optimization in a 200 keV DTEM source by geometry-driven aberration suppression.

Ultramicroscopy·2026
See all related articles

Related Experiment Video

Updated: May 19, 2026

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
08:18

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Published on: October 3, 2015

Defect structures in ZnO studied by high-resolution structural and spectroscopic imaging.

H Schmid1, E Okunishi, W Mader

  • 1INM-Leibniz Institute for New Materials, 66123 Saarbrücken, Germany. herbert.schmid@inm-gmbh.de

Ultramicroscopy
|August 18, 2012
PubMed
Summary
This summary is machine-generated.

Trivalent dopants like iron and indium in zinc oxide form inversion domain structures. These dopants primarily localize at inversion domain boundaries, with low solubility within the zinc oxide itself.

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees
06:50

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

Published on: November 29, 2016

Related Experiment Videos

Last Updated: May 19, 2026

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
08:18

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Published on: October 3, 2015

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees
06:50

Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees

Published on: November 29, 2016

Area of Science:

  • Materials Science
  • Solid State Chemistry
  • Nanotechnology

Background:

  • Zinc oxide (ZnO) exhibits characteristic inversion domain structures when doped with trivalent ions (Fe3+ or In3+).
  • These domains are separated by basal (b-IDBs) and pyramidal (p-IDBs) inversion domain boundaries.
  • Understanding dopant behavior at these boundaries is crucial for controlling ZnO properties.

Purpose of the Study:

  • To investigate the structural and compositional characteristics of inversion domain structures in doped ZnO.
  • To determine the localization and solubility of trivalent dopants (Fe3+, In3+) within ZnO and at inversion domain boundaries.
  • To elucidate the atomic-scale mechanisms governing dopant incorporation and structural inversion.

Main Methods:

  • Aberration-corrected analytical transmission electron microscopy/scanning transmission electron microscopy (Cs-corrected analytical TEM/STEM).
  • Electron energy loss spectroscopy (EELS) and energy-dispersive X-ray spectroscopy (EDS) for compositional analysis.
  • High-angle annular dark-field (HAADF) and annular bright-field (ABF) STEM imaging for atomic-resolution structural characterization.

Main Results:

  • Trivalent dopants are predominantly localized within both b-IDBs and p-IDBs, with low solid solubility (<0.5at%) in ZnO domains.
  • A direct correlation was observed between inversion domain structure and dopant concentration, consistent with integral EDS/EELS measurements.
  • Atomic resolution STEM imaging confirmed a single, close-packed monolayer of dopant ions within b-IDBs, revealing structural inversion and cation sublattice shifts due to dopant coordination.

Conclusions:

  • Trivalent dopants in ZnO primarily segregate to inversion domain boundaries, influencing the material's structure.
  • The study provides atomic-scale insights into dopant incorporation mechanisms and structural transformations at IDBs.
  • Cs-corrected analytical TEM/STEM is a powerful tool for characterizing complex nanostructures and dopant distributions in materials.