Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain

Yiming Li1, Hui-Wen Cheng, Chi-Hong Hwang

  • 1Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan.

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