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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Zi-Bin Chen1, Wen Lei, Bin Chen

  • 1School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales, 2006, Australia. xiaozhou.liao@sydney.edu.au.

Nanoscale Research Letters
|September 1, 2012
PubMed

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