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Graphene field-effect transistors as room-temperature terahertz detectors
L Vicarelli1, M S Vitiello, D Coquillat
1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy.
Nature Materials
|September 11, 2012
Summary
Researchers developed novel terahertz detectors using graphene field-effect transistors. These room-temperature devices offer a promising solution for fast, large-area imaging in the under-served terahertz spectrum.
Area of Science:
- Optoelectronics
- Condensed Matter Physics
- Photonics
Background:
- Graphene possesses unique optoelectronic properties ideal for photonic applications.
- Graphene is a promising material for terahertz (THz) detectors and modulators due to its high carrier mobility and broadband absorption.
- Solid-state devices for the THz region are currently limited.
Purpose of the Study:
- To demonstrate novel terahertz detectors based on antenna-coupled graphene field-effect transistors.
- To explore the potential of graphene for THz sensing applications.
Main Methods:
- Fabrication of antenna-coupled graphene field-effect transistors.
- Utilizing the nonlinear response of graphene to oscillating radiation fields.
- Investigating contributions from thermoelectric and photoconductive effects.
Main Results:
- Demonstrated room-temperature operation of THz detectors at 0.3 THz.
- Showcased the capability for fast, large-area imaging of macroscopic samples.
- Confirmed device performance suitable for realistic applications.
Conclusions:
- Antenna-coupled graphene field-effect transistors are effective THz detectors.
- These devices enable practical, room-temperature THz imaging.
- Graphene-based technology addresses the need for advanced THz solid-state devices.
