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Synthesis of TaZnO thin films using combinatorial magnetron sputtering and its electrical, structural and optical
Jae Cheol Park1, Gi Seok Heo, Jong Ho Lee
1National Center for Nanoprocess and Equipments, Korea Institute of Industrial Technology, Gwangju 500-480, Korea.
Abstract:
The structural, electrical, and optical properties of tantalium zinc oxide (TaZnO) thin films grown using combinatorial magnetron sputtering system were investigated. To explore the effects of film thickness and post annealing treatment on the properties of the films, we have fabricated TaZnO sample libraries having different thicknesses and carried out post annealing treatment. Sample libraries fabricated at room temperature showed the resistivity ranged 2.1 to approximately 7.1 x 10(-3) Omega cm, while the films post annealed at 200 degrees C under 1 mTorr exhibited the resistivity as low as 1.2 x 10(-3) Omega cm. XRD measurements revealed that the film structure was strongly depended on the film thickness, showing that the structure was changed from amorphous to polycrystalline with increasing the film thickness. Furthermore, it was found that figure of merit (0TC), which was determined by T% and Rs of the TaZnO films, showed maximum value as the films with a thickness of 230 nm was post-annealed at 200 degrees C under vacuum of 1 mTorr.
