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Updated: May 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Metastable C-centered orthorhombic Si8 and Ge8.
Jinhui Zhai1, Dongli Yu, Kun Luo
1State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People's Republic of China.
New theoretical predictions reveal stable C-centered orthorhombic (Cco) silicon (Si) and germanium (Ge) structures. These Cco-Si(8) and Cco-Ge(8) phases exhibit tunable electronic band gaps, offering potential for novel material applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- A novel carbon allotrope, C-centered orthorhombic carbon (Cco-C(8)), has been recently proposed.
- Exploring analogous structures in silicon and germanium could lead to new metastable materials.
- Understanding the properties of these materials is crucial for potential technological applications.
Purpose of the Study:
- To theoretically predict the structural, mechanical, and electronic properties of C-centered orthorhombic silicon (Cco-Si(8)) and germanium (Cco-Ge(8)).
- To assess the energetic stability of these novel phases compared to known metastable allotropes.
- To investigate the tunability of their electronic band gaps.
Main Methods:
- First-principles density functional theory (DFT) calculations were employed.
- Structural stability was evaluated through energy calculations.
- Mechanical properties were assessed by calculating bulk moduli.
- Electronic properties, including band gaps, were computed.
Main Results:
- The C-centered orthorhombic silicon (Cco-Si(8)) and germanium (Cco-Ge(8)) structures are predicted to be energetically comparable to known metastable phases.
- These phases can potentially be synthesized by decompressing high-pressure β-Sn phases or compressing nanotubes.
- The calculated bulk moduli of Cco-Si(8) and Cco-Ge(8) are similar to those of diamond phases.
- The electronic band gaps of Cco-Si(8) and Cco-Ge(8) were found to be tunable by adjusting lattice parameters.
Conclusions:
- The C-centered orthorhombic (Cco) silicon (Si) and germanium (Ge) structures represent promising new metastable phases.
- Their mechanical properties are comparable to diamond phases, suggesting potential for robust applications.
- The tunable electronic band gaps indicate potential for use in electronic and optoelectronic devices.
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