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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Semiconductor quantized voltage source.

F Hohls1, A C Welker, Ch Leicht

  • 1Physikalisch-Technische Bundesanstalt, Braunschweig, Germany.

Physical Review Letters
|September 26, 2012
PubMed
Summary
This summary is machine-generated.

Researchers developed an all-semiconductor quantized voltage source. This device generates precise voltages based on fundamental constants and frequency, potentially advancing quantum metrology.

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Last Updated: May 18, 2026

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Area of Science:

  • Solid-state physics
  • Quantum electronics
  • Metrology

Background:

  • Quantized voltage standards are crucial for precise electrical measurements.
  • Existing standards often rely on complex cryogenic systems.
  • A fully semiconductor-based solution offers potential for miniaturization and broader application.

Purpose of the Study:

  • To realize and investigate an all-semiconductor quantized voltage source.
  • To demonstrate output voltages dependent solely on fundamental constants (Planck's constant h and elementary charge e) and an applied frequency f.
  • To explore the potential for a new route towards closing the quantum metrology triangle.

Main Methods:

  • Integration of a single-electron pump operated at frequency f with a quantum Hall device in series.
  • Utilizing semiconductor technology for monolithic integration.
  • Characterization of the generated quantized output voltages.

Main Results:

  • Successful realization of an all-semiconductor quantized voltage source.
  • Generation of robust output voltages in the microvolt range (V(out) = f(h/e)).
  • Demonstration of voltage dependence on fundamental constants and excitation frequency.

Conclusions:

  • The developed device offers a novel semiconductor-based approach to quantized voltage generation.
  • The technology is expected to be scalable to higher voltage outputs using current semiconductor fabrication techniques.
  • This advancement could provide a new pathway for establishing primary voltage standards and closing the quantum metrology triangle.