Related Experiment Video
Updated: May 18, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Spin-filter tunnel junction with matched fermi surfaces
T Harada1, I Ohkubo, M Lippmaa
1Department of Applied Chemistry, The University of Tokyo, Hongo, Bunkyo-ku, Japan.
Physical Review Letters
|September 26, 2012
Summary
Achieving efficient spin injection into semiconductors is key for spintronics. Matching Fermi-surface shapes in tunnel junctions significantly boosts spin injection efficiency by reducing electron scattering.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Quantum Mechanics
Background:
- Efficient spin-polarized current injection is crucial for semiconductor spintronics.
- Spin-filter-type spin injectors face limitations due to spin scattering.
Purpose of the Study:
- To investigate the factors limiting spin injection efficiency in semiconductor spintronic devices.
- To explore methods for enhancing spin injection efficiency using epitaxial ferromagnetic insulator tunnel junctions.
Main Methods:
- Utilizing inelastic electron tunneling spectroscopy to analyze spin injection.
- Investigating the role of Fermi-surface matching between current injection source and target electrode materials.
Main Results:
- Spin scattering of tunneling electrons limits the efficiency of spin-filter-type spin injectors.
- Significant increase in spin injection efficiency observed by matching Fermi-surface shapes.
- Epitaxial ferromagnetic insulator tunnel junctions show improved performance.
Conclusions:
- Fermi-surface matching is as critical as structural matching for suppressing scattering in spintronic devices.
- Optimizing Fermi-surface alignment is a key strategy for developing high-efficiency spintronic devices.
More Related Videos
Related Concept Videos
01:12Fermi Level Dynamics
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
01:20Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:18Fermi Level
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
01:17Spin–Spin Coupling: One-Bond Coupling
Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
01:08Spin–Spin Coupling Constant: Overview
In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...