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Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

Cunzhu Tong¹, Soon Fatt Yoon, Lijun Wang

¹State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China. ljwang2000@hotmail.com.

Nanoscale Research Letters

|September 26, 2012

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Researchers fabricated submicron self-assembled (SA) gallium arsenide quantum rings (QRs) using the quantum size effect (QSE). Modulating the diffusion barrier with an InGaAs layer significantly impacted QR density, achieving densities as low as one QR per 6 μm².

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Self-assembled quantum rings (QRs) are crucial nanostructures for advanced electronic and optoelectronic devices.
Controlling the density and size of QRs is essential for optimizing device performance.
The quantum size effect (QSE) offers a pathway for fabricating nanostructures with tailored properties.

Purpose of the Study:

To experimentally demonstrate submicron self-assembled (SA) gallium arsenide (GaAs) quantum rings (QRs) utilizing the quantum size effect (QSE).
To investigate the influence of an ultrathin Indium Gallium Arsenide (InGaAs) layer on the surface nucleus diffusion barrier and its effect on SA QR formation.
To achieve precise control over QR density and dimensions through surface diffusion modulation.

Main Methods:

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Deposition of an ultrathin In0.1Ga0.9As layer of varying thickness on a GaAs substrate.
Growth of self-assembled GaAs quantum rings (QRs) influenced by the deposited InGaAs layer.
Analysis of the relationship between InGaAs layer thickness and QR density.
Characterization of the diffusion barrier modulation and its impact on the initial monolayers of growth.

Main Results:

QR density is significantly affected by the thickness of the inserted In0.1Ga0.9As layer.
Diffusion barrier modulation primarily occurs within the first five monolayers.
A decrease of approximately 160 meV in the diffusion barrier was achieved.
This reduction enabled the fabrication of SA QRs with densities as low as one QR per 6 μm².
Fabricated QRs exhibited diameters of 438 nm and outer diameters of 736 nm.

Conclusions:

The study successfully demonstrates the fabrication of submicron SA GaAs QRs using QSE.
Modulating the surface diffusion barrier with InGaAs is an effective method for controlling QR density.
The findings provide a pathway for precise engineering of nanostructures for future electronic and optoelectronic applications.