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Characteristics of Series Resonant Circuit

Characteristics of Series Resonant Circuit

Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:

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Updated: May 17, 2026

Fabrication of Silica Ultra High Quality Factor Microresonators

Fabrication of Silica Ultra High Quality Factor Microresonators

Published on: July 2, 2012

Ultralow-loss silicon ring resonators.

Aleksandr Biberman¹, Michael J Shaw, Erman Timurdogan

¹Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.

|October 18, 2012

Summary

This summary is machine-generated.

Silicon ring resonators achieved record low propagation losses of 2.7 dB/m, limited by bend loss. This indicates further improvements in silicon photonics are possible, pushing beyond current propagation loss limits.

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Area of Science:

Photonics and optical engineering
Materials science for integrated circuits

Background:

Silicon photonics enables advanced optical devices.
Minimizing propagation losses is crucial for device performance.
Ring resonators are key components in silicon photonic integrated circuits.

Purpose of the Study:

To experimentally demonstrate silicon ring resonators with ultra-high quality factors.
To investigate the limiting factors of propagation losses in silicon ring resonators.
To assess the potential for further reduction of propagation losses in silicon photonics.

Main Methods:

Fabrication of silicon ring resonators using advanced lithography techniques.
Precise measurement of internal quality factors (Q(0)) and propagation losses.
Analysis of loss contributions, specifically identifying bend loss as a dominant factor.

Main Results:

Achieved record internal quality factors of Q(0)=2.2×10(7).
Demonstrated record low propagation losses of 2.7 dB/m.
Identified bend loss as the primary limitation to propagation loss.

Conclusions:

The demonstrated silicon ring resonators represent a significant advancement in low-loss photonics.
Bend loss, not material absorption, currently limits propagation loss in silicon.
There is potential for further reduction of propagation losses in silicon photonic devices.