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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Thin Au surface plasmon waveguide Schottky detectors on p-Si.

Pierre Berini1, Anthony Olivieri, Chengkun Chen

  • 1School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Avenue, Ottawa, Canada. berini@eecs.uottawa.ca

Nanotechnology
|October 20, 2012
PubMed
Summary

This study explores surface plasmon sub-bandgap Schottky detectors for improved infrared detection. Surface plasmon excitation significantly enhances detector responsivity compared to direct illumination.

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Area of Science:

  • Optoelectronics
  • Plasmonics
  • Semiconductor Physics

Background:

  • Investigating novel photodetectors for infrared wavelengths (1310 and 1550 nm).
  • Utilizing asymmetric gold (Au) stripe waveguides on p-type silicon (p-Si) for Schottky detectors.
  • Exploring the impact of low Schottky barrier heights (0.33 eV) on internal quantum efficiency.

Purpose of the Study:

  • To theoretically and experimentally investigate surface plasmon sub-bandgap Schottky detectors.
  • To compare the performance of thick and thin Au stripes for enhanced hot hole emission.
  • To evaluate two excitation schemes: end facet illumination for surface plasmon launch and top illumination.

Main Methods:

  • Fabrication of asymmetric Au stripe waveguides on p-Si.
  • Theoretical modeling and experimental measurements at 1310 and 1550 nm.
  • High-resolution photocurrent mapping using piezoelectric scanning (100-200 nm steps).

Main Results:

  • Thin Au stripes show improved internal quantum efficiency due to higher hot hole emission probability.
  • Surface plasmon detectors exhibit ~2x higher responsivity (~1 mA/W) than top-illuminated detectors.
  • Experimental data aligns with theoretical predictions for both excitation schemes.

Conclusions:

  • Surface plasmon excitation is a viable method to significantly boost Schottky detector responsivity.
  • The hot hole attenuation length in Au stripes is estimated to be approximately 23 nm.
  • Asymmetric Au/p-Si Schottky detectors offer promising performance for sub-bandgap infrared detection.