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Updated: May 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide
Sivacarendran Balendhran1, Junkai Deng, Jian Zhen Ou
1MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia. shiva.balendhran@rmit.edu.au
Abstract:
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.
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