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Updated: May 17, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Spin injection in n-type resonant tunneling diodes
Vanessa Orsi Gordo1, Leonilson Ks Herval, Helder Va Galeti
1Physics Department, Federal University of São Carlos, São Carlos 13,565-905, Brazil. yara@df.ufscar.br.
Abstract:
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
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