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Fabrication and Optimization of Type II Silicon Clathrate Films
Published on: October 14, 2025
Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films
J Alberto Luna López1, J Carrillo López, D E Vázquez Valerdi
1IC-CIDS Benemérita Universidad Autónoma de Puebla, Ed, 103 C o D, Col, San Manuel, C,P, Puebla, Pue, 72570, Mexico. jose.luna@correo.buap.mx.
Nanoscale Research Letters
|November 1, 2012
Summary
This study explores silicon nanocrystals (Si-ncs) in silicon oxide (SiOx) films, revealing how growth temperature affects their properties. Lower temperatures enhance optical bandgap and photoluminescence, linked to Si-nc size and film composition.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Silicon nanocrystals (Si-ncs) embedded in silicon oxide (SiOx) matrices are promising for optoelectronic applications.
- Controlling Si-nc properties is crucial for tuning their optical and electronic behavior.
Purpose of the Study:
- To investigate the structural, compositional, morphological, and optical properties of SiOx films with embedded Si-ncs.
- To understand the influence of growth temperature on these properties and their interrelationships.
Main Methods:
- Hot filament chemical vapor deposition (HFCVD) for SiOx film preparation (900–1400°C).
- Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) for composition analysis.
- High-resolution transmission electron microscopy (HRTEM) for Si-nc size and morphology.
- Photoluminescence (PL) and transmittance spectroscopy for optical properties.
Main Results:
- Film composition varies with growth temperature, confirmed by FTIR, EDX, and XPS.
- HRTEM confirmed Si-ncs (1–6.5 nm diameter) within the SiOx matrix.
- Decreasing growth temperature led to a blueshift in photoluminescence and an increase in the optical bandgap.
- A correlation was established between film composition, Si-nc size, energy bandgap, PL, and surface morphology.
Conclusions:
- The study establishes a clear dependence of photoluminescence on the composition, structure, and morphology of Si-ncs in SiOx films.
- Growth temperature is a key parameter for tuning the optoelectronic properties of these Si-nc/SiOx systems.
- These findings are vital for designing advanced silicon-based nanomaterials for optical applications.
