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Thin-Film Reaction between [alpha]-Fe2O3 and (001) MgO
1Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, 204 Amundson Hall, Minneapolis, MN 55455.
Abstract:
The kinetics of a thin-film, solid-state reaction were investigated in the spinel-forming oxide system Fe2O3/MgO. In this study, epitactic thin films of Fe2O3 (α, or corundum, structure) were deposited on (001)-oriented MgO using pulsed-laser deposition (PLD). The resulting diffusion couples were then reacted at elevated temperatures in air to induce the reaction between the thin-film and bulk substrate to form the spinel, MgFe2O4. Both the as-deposited and reacted diffusion couples were characterized using low-voltage scanning and transmission electron microscopy. These techniques allow the kinetics of the reaction and the structural properties of the spinel to be investigated.
