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Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Evolutionary kinetics of graphene formation on copper
Kemal Celebi1, Matthew T Cole, Jong Won Choi
1Institute of Energy Technology, ETH Zürich, Zürich CH-8092, Switzerland.
Graphene growth on copper using chemical vapor deposition is not solely surface crystallization. New findings show adsorption-desorption dynamics and precursor reactions control graphene film formation.
Area of Science:
- Materials Science
- Surface Science
- Chemical Engineering
Background:
- Graphene synthesis on copper via chemical vapor deposition (CVD) is crucial for electronic applications.
- Previous models suggested graphene growth is dominated by surface crystallization after initial nucleation.
Purpose of the Study:
- To challenge the existing model of graphene growth on copper.
- To propose an alternative model explaining the kinetics and mechanisms of graphene CVD on copper.
Main Methods:
- Experimental observation of graphene growth kinetics.
- Analysis of secondary nucleation behavior.
- Kinetic modeling of adsorption-desorption and precursor dissociation processes.
Main Results:
- Observed Gompertzian sigmoidal growth kinetics, contradicting simple crystallization models.
- Identified secondary nucleation phenomena during graphene growth.
- Data supports a model where growth is governed by precursor adsorption-desorption and catalytic reactions.
Conclusions:
- The growth of graphene on copper by CVD is not solely dependent on initial surface supersaturation.
- Adsorption-desorption dynamics and catalytic precursor conversion play a critical role in controlling graphene growth.
- An alternative model involving dispersive kinetic processes offers a more accurate description of graphene CVD on copper.
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