Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

A Lin1, B L Liang, V G Dorogan

  • 1California NanoSystems Institute and Electrical Engineering Department, University of California at Los Angeles, CA 90095, USA.

Nanotechnology
|January 30, 2013
PubMed
Summary

Surface passivation significantly alters InAs quantum dot (QD) hybrid structures, impacting photoluminescence and carrier tunneling. This sensitivity suggests potential for novel sensing applications.

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