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Electronic Griffiths phase in the Te-doped semiconductor FeSb2.
Rongwei Hu1, Kefeng Wang, Hyejin Ryu
1Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.
Physical Review Letters
|February 2, 2013
Summary
Researchers observed an electronic Griffiths phase in doped FeSb(2) semiconductors. This phase emerges near a metal-insulator transition, indicating disorder-induced non-Fermi liquid behavior in Fe(Sb(1-x)Te(x))(2) crystals.
Area of Science:
- Condensed matter physics
- Materials science
- Disordered systems
Background:
- Disordered insulators with localized moments near a metal-insulator transition are predicted to exhibit an electronic Griffiths phase.
- Understanding such phases is crucial for exploring novel electronic states in materials.
Purpose of the Study:
- To investigate the emergence of an electronic Griffiths phase in doped FeSb(2).
- To characterize the electronic and magnetic properties of Fe(Sb(1-x)Te(x))(2) single crystals.
Main Methods:
- Synthesis of Fe(Sb(1-x)Te(x))(2) single crystals with varying tellurium doping (x).
- Comprehensive characterization using magnetic, transport, and thermodynamic measurements.
- Analysis of experimental data for signatures of non-Fermi liquid behavior and electronic Griffiths phase.
Main Results:
- Observed signatures of disorder-induced non-Fermi liquid behavior in the doped semiconductor FeSb(2).
- Measured a Wilson ratio consistent with strong electronic correlations.
- Identified the electronic Griffiths phase on the metallic boundary between insulating and magnetically ordered states in Fe(Sb(1-x)Te(x))(2).
Conclusions:
- The study confirms the emergence of an electronic Griffiths phase in doped FeSb(2).
- Disorder plays a critical role in inducing non-Fermi liquid behavior and this unique electronic phase.
- The findings provide insights into the complex interplay between disorder, electronic correlations, and magnetic order in materials.
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