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Related Experiment Video

Updated: May 14, 2026

Atom Probe Tomography Analysis of Exsolved Mineral Phases
08:14

Atom Probe Tomography Analysis of Exsolved Mineral Phases

Published on: October 25, 2019

A model to predict image formation in Atom probe Tomography.

F Vurpillot1, A Gaillard, G Da Costa

  • 1GPM UMR CNRS 6634-Université de Rouen, Avenue de l'Université-B.P. 12, 76801 Saint Etienne Du Rouvray Cedex, France.

Ultramicroscopy
|February 13, 2013
PubMed
Summary
This summary is machine-generated.

This study presents a new model for field evaporation from a tip, considering atomic to macroscopic scales. It accurately predicts ion projection, voltage, and magnification, aiding understanding of dielectric material behavior.

Keywords:
Atom Probe TomographyDielectricImage reconstructionModelisation

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Last Updated: May 14, 2026

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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Area of Science:

  • Materials Science
  • Surface Science
  • Physics

Background:

  • Field evaporation is crucial for understanding tip behavior in microscopy.
  • Previous models often lack multi-scale considerations and realistic geometry.
  • Dielectric materials present unique challenges due to their conductivity and permittivity.

Purpose of the Study:

  • To develop a comprehensive model for field evaporation of a tip.
  • To incorporate length scales from atomic to macroscopic levels.
  • To understand field evaporation in bulk dielectric materials, including residual conductivity effects.

Main Methods:

  • A 3D model with cylindrical symmetry for tip shape evolution at the atomic scale.
  • Realistic representation of tip geometry and surrounding electrodes.
  • Determination of ion projection laws and voltage requirements.

Main Results:

  • The model provides direct access to field evaporation voltage and evolving magnification.
  • It elucidates reconstruction artifacts arising from differing material properties.
  • The model successfully applied to bulk dielectric materials, highlighting residual conductivity's role.

Conclusions:

  • The developed model offers a realistic and multi-scale approach to field evaporation.
  • It enhances understanding of tip behavior and imaging artifacts in microscopy.
  • The study provides insights into the field evaporation of dielectric materials.