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Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results

K Lepinay1, F Lorut, R Pantel

  • 1STMicroelectronics, 850 rue Jean Monnet F-38926 Crolles Cedex, France. kevin.lepinay@st.com

Micron (Oxford, England : 1993)
|February 16, 2013
PubMed

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