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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer

Run-Chen Fang1, Qing-Qing Sun, Peng Zhou

  • 1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 200433, Shanghai, China. qqsun@fudan.edu.cn.

Nanoscale Research Letters
|February 21, 2013
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Summary

Researchers developed a flexible resistive random access memory using low-temperature atomic layer deposition. This oxide-based memory shows reliable switching and long-term stability for flexible electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Resistive random access memory (RRAM) is a promising non-volatile memory technology.
  • Flexible electronics require memory devices compatible with low-temperature fabrication processes.

Purpose of the Study:

  • To demonstrate a flexible RRAM device using a low-temperature atomic layer deposition (ALD) process.
  • To evaluate the electrical performance, reliability, and stability of the fabricated flexible RRAM.

Main Methods:

  • Fabrication of a HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate using ALD.
  • Characterization of the device's resistive switching behavior, retention characteristics, thermal stability, and operation speed.

Main Results:

  • The device exhibited bipolar, reliable, and reproducible resistive switching.
  • Excellent thermal stability was observed, with a 10-year usage projected at room temperature and 85°C.
  • Fast operation speeds of 500 ns (reset) and 800 ns (set) were achieved.

Conclusions:

  • Low-temperature ALD enables the fabrication of high-performance flexible RRAM.
  • The developed oxide-based RRAM shows potential for flexible integrated circuits.