Effects of multi-layer graphene capping on Cu interconnects
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Updated: May 13, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Chang Goo Kang1, Sung Kwan Lim, Sangchul Lee
1School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
Abstract:
The benefits of multi-layer graphene (MLG) capping on Cu interconnects have been experimentally demonstrated. The resistance of MLG capped Cu wires improved by 2-7% compared to Cu wires. The breakdown current density increased by 18%, suggesting that the MLG can act as an excellent capping material for Cu interconnects, improving the reliability characteristics. With a proper process optimization, MLG capped Cu interconnects could become a promising technology for high density back end-of-line interconnects.

