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High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China.
Optics Express
|March 14, 2013
Summary
We developed a fast silicon Mach-Zehnder modulator (MZM) with low optical loss using a lateral PN junction. This device achieves high-speed data transmission up to 60 Gbit/s, making it suitable for advanced optical communication systems.
Area of Science:
- Photonics
- Integrated Optics
- Semiconductor Devices
Background:
- Silicon Mach-Zehnder modulators (MZMs) are crucial for optical communications.
- Achieving high speed and low loss simultaneously remains a challenge.
Purpose of the Study:
- To demonstrate a high-speed silicon MZM with low insertion loss.
- To optimize device design for improved performance.
Main Methods:
- Utilized the carrier depletion effect in a lateral PN junction.
- Optimized doping concentration and junction placement in a 750 μm phase shifter.
- Fabricated and tested the silicon MZM device.
Main Results:
- Achieved a low on-chip insertion loss of 1.9 dB.
- Obtained a VπLπ product below 2 V·cm.
- Demonstrated high-speed modulation from 45-60 Gbit/s with a total insertion loss of 3.5 dB.
- Realized a 7.5 dB extinction ratio at 50 Gbit/s.
Conclusions:
- The developed silicon MZM offers a promising solution for high-speed, low-loss optical modulation.
- Precise control over doping and junction design is key to achieving superior MZM performance.
- This technology can advance the capabilities of optical communication networks.
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