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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Published on: May 24, 2020

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

Hyun-Suk Kim1, Sang Ho Jeon, Joon Seok Park

  • 1Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do, Republic of Korea.

Scientific Reports
|March 16, 2013
PubMed

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