Hybrid III-V/silicon single-mode laser with periodic microstructures.

Area of Science:

• Photonics and optoelectronics
• Materials science
• Integrated optics

Background:

• Photonic integration circuits (PICs) require efficient and compact light sources.
• Hybrid III-V/silicon approaches offer a pathway to combine the advantages of different material systems.

Purpose of the Study:

• To present a novel hybrid III-V/silicon single-mode laser for C-band operation.
• To demonstrate a cost-effective fabrication process for integrated photonic devices.

Main Methods:

• Wafer-to-wafer direct bonding of InGaAlAs gain structure onto patterned silicon-on-insulator.
• Implementation of a mode-selective mechanism using a hybrid III-V/silicon straight cavity with periodic microstructures.
• Utilizing low-cost i-line projection photolithography for the fabrication process.

Main Results:

• Achieved 0.62 mW output power at room temperature in continuous-wave operation.
• Demonstrated a side mode suppression ratio (SMSR) greater than 20 dB.
• Successful integration of III-V gain material with silicon photonics.

Conclusions:

• The developed hybrid laser is a viable light source for C-band photonic integration circuits.
• The fabrication method using i-line lithography is cost-effective and scalable.
• This work contributes to the advancement of integrated optoelectronics by enabling efficient hybrid laser fabrication.