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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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High-power flip-chip mounted photodiode array.

Allen S Cross1, Qiugui Zhou, Andreas Beling

  • 1Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. asc8y@virginia.edu

Optics Express
|April 24, 2013
PubMed
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Modified uni-traveling-carrier photodiode arrays (MUTC PDA) demonstrate high RF output power. These MUTC PDAs offer superior performance and thermal management compared to discrete detectors.

Area of Science:

  • Optoelectronics
  • Microwave engineering
  • Semiconductor device physics

Background:

  • Modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) are advanced optoelectronic devices.
  • High-frequency applications demand efficient photodetectors with high output power and good thermal performance.
  • Flip-chip bonding on aluminum nitride (AlN) substrates offers excellent thermal conductivity for high-power devices.

Purpose of the Study:

  • To demonstrate the performance of four-element MUTC PDA flip-chip bonded onto transmission lines on AlN substrates.
  • To achieve high radio frequency (RF) output powers at millimeter-wave frequencies.
  • To compare the performance of MUTC PDA with discrete photodetectors of similar active areas.

Main Methods:

  • Fabrication of four-element MUTC PDA flip-chip bonded onto transmission lines on AlN substrates.

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  • Measurement of RF output power at 35 GHz and 48 GHz using PDAs with 28-μm diameter photodiodes.
  • Systematic comparison of a four-element PDA (20-μm diameter elements) with a discrete detector (40-μm diameter active area).

    • Main Results:

    • Achieved high RF output powers of 26.2 dBm at 35 GHz and 21.0 dBm at 48 GHz with a 28-μm diameter PDA.
    • The MUTC PDA demonstrated higher output power compared to the discrete detector.
    • The MUTC PDA exhibited superior thermal dissipation capabilities over the discrete counterpart.

    Conclusions:

    • Four-element MUTC PDAs on AlN substrates are effective for high-power millimeter-wave applications.
    • MUTC PDAs offer advantages in output power and thermal management compared to discrete detectors.
    • The demonstrated MUTC PDA technology shows significant potential for advanced RF and optoelectronic systems.