Transit phenomena in organic field-effect transistors through Kelvin-probe force microscopy
Christian Melzer1, Christopher Siol, Heinz von Seggern
1Ruprecht-Karls-Universität Heidelberg, Centre for Advanced Materials, Im Neuenheimer Feld 270, 69120 Heidelberg, Germany. christian.melzer@kip.uni-heidelberg.de
Advanced Materials (Deerfield Beach, Fla.)
|April 30, 2013
Summary
Investigating pentacene field-effect transistors reveals how surface potential changes during charge reversal. This allows for precise measurement of carrier density and electric field dependent hole mobility in the sub-threshold regime.
Area of Science:
- Organic electronics
- Semiconductor device physics
Background:
- Pentacene-based field-effect transistors (FETs) are crucial in organic electronics.
- Understanding charge carrier behavior is essential for device optimization.
Purpose of the Study:
- To investigate the temporal evolution of surface potential in pentacene FETs.
- To analyze charge reversal from electron to hole dominance.
- To determine carrier density and mobility characteristics.
Main Methods:
- Measurement of surface-potential distribution.
- Analysis during charge reversal in FETs.
- Characterization in the sub-threshold regime.
Main Results:
- Detailed mapping of surface potential dynamics.
- Quantification of carrier density.
- Determination of electric field dependent hole mobility.
Conclusions:
- The study provides insights into charge transport mechanisms in pentacene FETs.
- Enables accurate characterization of mobility under varying electric fields.
- Crucial for advancing organic transistor technology.
