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Published on: October 23, 2018
Efficient charge injection in p-type polymer field-effect transistors with low-cost molybdenum electrodes through
Kang-Jun Baeg1, Gwang-Tae Bae, Yong-Young Noh
1Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 12 Bulmosan-ro 10 beon-gil, Changwon, Gyeongsangnam-do 642-120, Republic of Korea.
High-performance polymer organic field-effect transistors (OFETs) use a vanadium pentoxide (V2O5) interlayer to enable efficient charge injection from low-cost molybdenum (Mo) electrodes, achieving mobility comparable to gold electrodes.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Polymer organic field-effect transistors (OFETs) are crucial for low-cost electronics.
- Molybdenum (Mo) electrodes are cost-effective but suffer from poor charge injection in OFETs.
- High work function metals like gold (Au) provide better charge injection but are expensive.
Purpose of the Study:
- To investigate the use of a vanadium pentoxide (V2O5) thin film as an interlayer to improve charge injection in Mo-based polymer OFETs.
- To enhance the performance of polymer OFETs using low-cost Mo electrodes.
- To understand the mechanism of improved charge injection facilitated by the V2O5 interlayer.
Main Methods:
- Fabrication of polymer OFETs using regioregular poly(3-hexylthiophene) (rr-P3HT) and a p-type polymer semiconductor (PC12TV12T).
- Incorporation of a thermally deposited V2O5 thin film interlayer between the Mo electrode and the polymer semiconductor.
- Characterization of device performance, including charge carrier mobility.
- Analysis of electrode work function modification using ultraviolet photoelectron spectroscopy (UPS).
Main Results:
- Polymer OFETs with a bare Mo electrode showed significantly lower charge carrier mobility compared to Au electrodes due to a large hole injection barrier (0.5-1.0 eV).
- The incorporation of a V2O5 interlayer on Mo electrodes resulted in charge carrier mobility comparable to pristine Au electrodes.
- The best performing devices with a 5 nm V2O5 interlayer achieved mobilities of 0.12 cm²/Vs for P3HT and 0.38 cm²/Vs for PC12TV12T.
- UPS measurements indicated that the work function of Mo increased from 4.3 eV to 4.9 eV with increasing V2O5 thickness, reducing the injection barrier.
Conclusions:
- The V2O5 interlayer effectively lowers the hole injection barrier between Mo electrodes and p-type polymer semiconductors.
- This V2O5 interlayer enables high-performance polymer OFETs using low-cost Mo electrodes, making them comparable to those with expensive Au electrodes.
- The findings pave the way for developing large-area, cost-effective electronic devices utilizing Mo electrodes and V2O5 interlayers.
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